MTB010N06I3 Datasheet, PDF (6/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 6/ 8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
180
3000
160
VDS=10V
140
2700
2400
2100
120
1800
100
1500
80
1200
60
900
40
600
20
300
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0
0.001
1
D=0.5
Transient Thermal Response Curves
Single Pulse Power Rating, Junction to Case
TJ(MAX)=175°C
TC=25°C
θ JC=2.5°C/W
0.01
0.1
1
Pulse Width(s)
10
100
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*Rθ JC(t)
4.RθJC=2.5°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB010N06I3
CYStek Product Specification