MTB010N06I3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTB010N06I3
BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=15A
60V
50A
9.8 mΩ(typ)
12.8 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
MTB010N06I3
Outline
TO-251
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTB010N06I3-0-UA-G
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTB010N06I3
CYStek Product Specification