MTB010N06I3 Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
100
1.2
Ciss
1
C _oss
0.8
Crss
0.6
ID=1mA
ID=250μA
10
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
0.4
-65 -35 -5 25 55 85 115 145 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
1000
VDS=5V
Ta=25°C
Pulsed
0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Safe Operating Area
RDSON
100 ^Limited
100μ s
1ms
10ms
10
100ms
1s
1 _{TC=25°C, Tj=175°C}
DC
VGS=10V, RθJC=2.5°C/W
Single Pulse
0.1
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
8
6
4
VDS=48V
2
ID=15A
0
0
5
10
15
20
25
30
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
60
50
40
30
20
10 _{VGS=10V, RθJC=2.5°C/W}
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB010N06I3
CYStek Product Specification