MTB010N06I3 Datasheet, PDF (4/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 4/ 8
Typical Characteristics
Typical Output Characteristics
180
10V
150
9V
8V
7V
120
VGS=6V
90
VGS=5V
60
30
0
0
VGS=4.5V
VGS=4V
VGS=3.5V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
1000
100
VGS=4.5V
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1.0
0.8
Tj=25°C
10
VGS=10V
1
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
70
ID=30A
60
50
40
30
20
10
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.6
Tj=150°C
0.4
0.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
VGS=10V, ID=30A
2.0
RDS(ON)@Tj=25°C : 9.8mΩ typ.
1.6
1.2
0.8
VGS=4.5V, ID=15A
0.4
RDS(ON)@Tj=25°C : 12.8mΩtyp.
0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTB010N06I3
CYStek Product Specification