MTA5D0N04I3 Datasheet, PDF (6/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C054I3
Issued Date : 2017.03.15
Revised Date :
Page No. : 6/8
Typical Characteristics(Cont.)
200
180
160
140
120
100
80
60
40
20
0
0
Typical Transfer Characteristics
VDS=10V
1
2
VGS, Gate-Source Voltage(V)
1000
900
800
700
600
500
400
300
200
100
0
3
0.0001
Transient Thermal Response Curves
1
Single Pulse Power Rating, Junction to Case
TJ(MAX)=150°C
TC=25°C
RθJC=3°C/W
0.001 0.01
0.1
1
10
Pulse Width(s)
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.E-05
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC(t)=3 °C/W max.
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
MTA5D0N04I3
CYStek Product Specification