MTA5D0N04I3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C054I3
Issued Date : 2017.03.15
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
40
V
VGS
±12
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
51
ID
32
A
Pulsed Drain Current
(Note 1)
IDM
204
Avalanche Current @ L=0.1mH
IAS
46
Avalanche Energy @ L=1mH, ID=20A, VDD=15V (Note 3)
EAS
200
mJ
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
EAR
6
Total Power Dissipation @ TC=25℃
Total Power Dissipation @ TC=100℃
42
PD
W
17
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle ≤ 1%.
3. 100% tested by conditions of L=0.1mH, VGS=10V, IAS=12A, VDD=15V
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
3
110
Unit
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ.
Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
40
-
0.3
-
-
V
VGS=0V, ID=250μA
1.2
VDS = VGS, ID=250μA
-
-
±100
nA V_GS=±12V, V_DS=0V
-
-
-
-
1
25
μA
VDS =32V, VGS =0V
VDS =32V, VGS =0V, Tj=125°C
-
5.7
8
mΩ ^{VGS =4.5V, ID=20A}
-
6.6
10
VGS =2.5V, ID=15A
-
25
-
S VDS =10V, ID=10A
-
80.9
-
-
5.3
-
nC VDS=20V, ID=20A, VGS=10V
-
11.7
-
-
11.8
-
-
17.2
-
87.4
-
-
ns
VDS=20V, ID=20A, VGS=10V,
RGS=1Ω
-
6.2
-
MTA5D0N04I3
CYStek Product Specification