MTA5D0N04I3 Datasheet, PDF (4/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C054I3
Issued Date : 2017.03.15
Revised Date :
Page No. : 4/8
Typical Characteristics
200
180
160
140
120
100
80
60
40
20
0
0
Typical Output Characteristics
10V, 9V, 8V,7V,6V,5V,4V,3V
2.5V
2V
VGS=1.5V
2
4
6
8
10
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
1
VGS=4.5V
VGS=2.5V
0.8
10
0.6
VGS=10V
0.4
Tj=25°C
Tj=150°C
1
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
20
18
16
ID=20A
14
12
10
8
6
4
2
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2
VGS=4.5V, ID=20A
1.6
1.2
0.8
0.4
RDS(ON)@Tj=25°C : 5.7mΩ
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTA5D0N04I3
CYStek Product Specification