MTA5D0N04I3 Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C054I3
Issued Date : 2017.03.15
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
Coss
100
Crss
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
10
0
5
10 15 20 25 30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
VDS=10V
0.1
Pulsed
Ta=25°C
0.01
0.001
0.01
0.1
1
10
ID, Drain Current(A)
1000
100
Maximum Safe Operating Area
RDS(ON)
Limited
10
1
TC=25°C, Tj=150°, VGS=10V
RθJC=3°C/W, Single Pulse
0.1
0.1
1
10
VDS, Drain-Source Voltage(V)
10μs
100μs
1ms
10ms
100ms
DC
100
8
6
4
2
VDS=20V
ID=20A
0
0 10 20 30 40 50 60 70 80 90 100
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
60
50
40
30
20
10
VGS=10V, RθJC=3°C/W
0
25
50
75 100 125 150 175
TC, Case Temperature(°C)
MTA5D0N04I3
CYStek Product Specification