MTA020A01Q8_16 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C073Q8
Issued Date : 2016.07.04
Revised Date : 2016.10.21
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
40
35
VDS=5V
30
25
20
15
10
5
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
200
TJ(MAX)=150°C
160
TA=25°C
RθJA=78°C/W
120
80
40
0
5
0.0001 0.001 0.01 0.1
1
10 100
Pulse Width(s)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=78°C/W
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTA020A01Q8
CYStek Product Specification