MTA020A01Q8_16 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C073Q8
Issued Date : 2016.07.04
Revised Date : 2016.10.21
Page No. : 4/9
Typical Characteristics
40
35
30
25
20
15
10
5
0
0
Typical Output Characteristics
8V, 7V, 6V, 5V, 4V
3V
2.5V
2V
VGS=1.5V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.3
1.2
1.1
1
0.9
0.8
ID=250μA,
0.7
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
100
VGS=1.8V
VGS=3V
VGS=2.5V
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
10
0.01
VGS=4.5V
0.1
1
10
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
ID=7A
80
70
60
50
40
30
20
10
0
012345678
VGS, Gate-Source Voltage(V)
0.4
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
1.8
1.6
VGS=4.5V, ID=7A
1.4
1.2
1
0.8
0.6
RDS(ON) @ Tj=25°C : 15.4 mΩ
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTA020A01Q8
CYStek Product Specification