MTA020A01Q8_16 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C073Q8
Issued Date : 2016.07.04
Revised Date : 2016.10.21
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
Coss
1
ID=1mA
100
Crss
0.8
10
0
10
2
4
6
8
10
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
VDS=5V
1
VDS=10V
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
100μs
10
1ms
10ms
1
0.1
TA=25°C, Tj=150°C,VGS=4.5V
RθJA=78°C/W, Single Pulse
100ms
1s
10s
DC
0.01
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
8
7
6
5
4
3
2
VDS=10V
1
ID=7A
0
0
2
4
6
8
10
12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs JunctionTemperature
9
8
7
6
5
4
3
2 _{TA=25°C, Tj(max)=150°C, VGS=4.5V}
1 ^{RθJA=78°C/W, Single Pulse}
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
MTA020A01Q8
CYStek Product Specification