MTA020A01Q8_16 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C073Q8
Issued Date : 2016.07.04
Revised Date : 2016.10.21
Page No. : 2/9
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25C
Continuous Drain Current @ VGS=10V, TC=100C
Continuous Drain Current @ VGS=10V, TA=25C
Continuous Drain Current @ VGS=10V, TA=70C
Pulsed Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
Unit
14
±8
V
11.3
7.2
7 (Note 2)
A
5.6 (Note 2)
20 (Note 1)
2
1.6 (Note 2)
W
0.9 (Note 3)
-55~+150
C
Thermal Data
Parameter
Symbol
Thermal Resistance, Junction-to-case, max
RθJC
Thermal Resistance, Junction-to-ambient, max, dual
Thermal Resistance, Junction-to-ambient, max , single
RθJA
operation
Note : 1. Pulse width limited by maximum junction temperature
2. Surface mounted on 1 in²copper pad of FR-4 board, pulse width≤10s.
3. Surface mounted on minimum copper pad, pulse width≤10s.
Value
35
62.5
78 (Note 2)
135 (Note 3)
Unit
C/W
Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
14
0.5
-
-
-
1.0
V
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
-
9.8
-
S VDS =5V, ID=7A
-
-
±100
nA V_GS=±8V, V_DS=0V
IDSS
RDS(ON) *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
-
-
-
-
1
25
μA
VDS =14V, VGS =0V
VDS =10V, VGS =0V, Tj=70C
-
-
15.4
21.7
22
32
mΩ
VGS =4.5V, ID=7A
VGS =2.5V, ID=5A
-
6.3
-
-
0.7
-
nC VDS=10V, ID=7A, VGS=4.5V
-
2.7
-
-
5.6
-
-
-
16
-
22.8
-
ns
VDS=10V, ID=7A, VGS=5V,
RG=3.3Ω
-
9.8
-
MTA020A01Q8
CYStek Product Specification