MTD030N10QJ3_16 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C168J3
Issued Date : 2016.03.07
Revised Date : 2016.10.27
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
100
1.2
Ciss
1
C _oss
0.8
Crss
0.6
ID=1mA
ID=250μA
10
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
1
0.1
0.01
0.001
1000
VDS=15V
Ta=25°C
Pulsed
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
10
1
0.1
0.1
RDSON
Limited
TC=25°C, Tj=150°C
VGS=10V, RθJC=2.5°C/W
Single Pulse
100μs
1ms
10ms
100ms
1s
DC
1
10
100
VDS, Drain-Source Voltage(V)
1000
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
VDS=50V
2
ID=10A
0
0
5
10
15 20 25 30
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
35
30
25
20
15
10
5 VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTD030N10QJ3
CYStek Product Specification