MTD030N10QJ3_16 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
ID
*4
Continuous Drain Current @ TA=70°C, VGS=10V
*4
Pulsed Drain Current
*1
IDM
Avalanche Current
IAS
Avalanche Energy @ L=0.1mH, IAS=29A, VDD=25V, VGS=10V *3 EAS
Repetitive Avalanche Energy @ L=0.05mH
*1, *2 EAR
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Total Power Dissipation @TA=25℃
PD
*4
Total Power Dissipation @TA=70℃
*4
Operating Junction and Storage Temperature Range
Tj, Tstg
Spec. No. : C168J3
Issued Date : 2016.03.07
Revised Date : 2016.10.27
Page No. : 2/9
Limits
Unit
100
±20
V
29
18
6.5
A
5.2
116
29
42
mJ
5
50
20
W
2.5
1.6
-55~+150
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max *4
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
*3. 100% tested by conditions of L=0.1mH, IAS=24A, VGS=10V, VDD=25V
*4. Surface mounted on 1 in² copper pad of FR-4 board
Value
2.5
50
110
Unit
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
100
-
-
V VGS=0V, ID=250μA
∆BVDSS/∆Tj
-
0.07
-
V/°C Reference to 25°C, ID=250μA
VGS(th)
1.3
-
2.6
V VDS =VGS, ID=250μA
GFS *1
-
IGSS
-
20
-
S VDS =10V, ID=10A
-
±100
nA V_GS=±20V, V_DS=0V
IDSS
-
-
-
-
1
25
μA
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=125°C
RDS(ON) *1
-
-
23
30
mΩ ^{VGS =10V, ID=10A}
33
66
VGS =4.5V, ID=7A
Dynamic
Qg *1, 2
-
23
-
Qgs *1, 2
-
2.4
-
nC ID=10A, VDS=50V, VGS=10V
Qgd *1, 2
-
10
-
MTD030N10QJ3
CYStek Product Specification