MTD030N10QJ3_16 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C168J3
Issued Date : 2016.03.07
Revised Date : 2016.10.27
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
50
10V,9V,8V,7V,6V
40
5V
Brekdown Voltage vs Ambient Temperature
1.4
1.2
30
4.5V
1
20
4V
10
VGS=3.5V
0
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
VGS=5V
VGS=4.5V
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
VGS=10V
0.4
10
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
ID=10A
400
300
200
100
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2
VGS=10V, ID=10A
1.6
1.2
0.8
0.4
RDS(ON)@Tj=25°C : 23mΩtyp.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD030N10QJ3
CYStek Product Specification