MTD030N10QJ3_16 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C168J3
Issued Date : 2016.03.07
Revised Date : 2016.10.27
Page No. : 3/9
td(ON) *1, 2
-
10
-
tr *1, 2
td(OFF) *1, 2
-
24
-
ns
-
32.2
-
tf *1, 2
-
13.4
-
Ciss
-
705
-
Coss
-
123
-
pF
Crss
-
120
-
Rg
-
1
-
Ω
Source-Drain Diode
IS *1
ISM *3
-
-
-
-
29
116
A
VSD *1
-
0.74
1
V
trr
-
32
-
ns
Qrr
-
36
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
VDS=50V, ID=10A, VGS=10V,
RG=3Ω
VGS=0V, VDS=25V, f=1MHz
f=1MHz
IS=1A, VGS=0V
IF=10A, dIF/dt=100A/μs
Recommended soldering footprint
MTD030N10QJ3
CYStek Product Specification