MTD015P10E3 Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C159F3
Issued Date : 2016.11.02
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
100000
Capacitance vs Drain-to-Source Voltage
Ciss
10000
Threshold Voltage vs Junction Tempearture
1.4
1.2
1
ID=-1mA
0.8
1000
100
0
C _oss
Crss
5
10 15 20 25 30
-VDS, Drain-Source Voltage(V)
0.6
ID=-250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
1
0.1
0.01
0.001
VDS=-10V
Pulsed
Ta=25°C
0.01
0.1
1
10
100
-ID, Drain Current(A)
8
VDS=-50V
6
4
VDS=-80V
2
ID=-90A
0
0 20 40 60 80 100 120 140 160 180 200
Total Gate Charge---Qg(nC)
1000
100
Maximum Safe Operating Area
RDS(ON)
Limited
10μs
100μs
1ms
10
1
TC=25°C, Tj=175°C, VGS=-10V,
RθJC=0.5°C/W single pulse
10ms
100ms
DC
0.1
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
120
Silicon Limit
100
80
Package Limit
60
40
20 _{VGS=-10V, RθJC=0.5°C/W}
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTD015P10E3
CYStek Product Specification