MTD015P10E3 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C159F3
Issued Date : 2016.11.02
Revised Date :
Page No. : 3/8
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg(VGS=-10V)
*Qg(VGS=-4.5V)
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
Min.
-100
-1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
43
-
-
-
11.6
13.7
176
90
20
62
34.6
35.8
169
51
10103
593
161
2.9
Max.
-
-2.6
-
±100
-1
-25
15
18
264
135
-
-
51.9
53.7
253.5
76.5
-
-
-
-
Unit Test Conditions
V
S
nA
μA
mΩ
VGS=0V, ID=-250μA
VDS = VGS, ID=-250μA
VDS =-10V, ID=-10A
VGS=±20V
VDS =-100V, VGS =0V
VDS =-80V, VGS =0V, Tj=125°C
VGS =-10V, ID=-20A
VGS =-4.5V, ID=-15A
nC ID=-90A, VDS=-50V, VGS=-10V
ns VDS=-50V, ID=-90A, VGS=-10V, RG=1Ω
pF VGS=0V, VDS=-30V, f=1MHz
Ω f=1MHz
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
-
-
-
-84
-428
A
-
-0.78
-1.2
V IS=-20A, VGS=0V
-
-
29
70
-
-
ns
nC
IF=-20A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTD015P10E3
CYStek Product Specification