MTD015P10E3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V (silicon limit)
Continuous Drain Current @ TC=25°C, VGS=-10V (package limit)
Continuous Drain Current @ TC=100°C, VGS=-10V
Pulsed Drain Current
(Note 3)
Continuous Drain Current @ TA=25°C , VGS=10V
(Note 2)
Continuous Drain Current @ TA=70°C , VGS=10V
(Note 2)
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=0.1mH, ID=-107A, VDD=-50V (Note 5)
Repetitive Avalanche Energy@ L=0.1mH
Power Dissipation
TC=25°C
TC=125°C
(Note 1)
(Note 1)
Power Dissipation
TA=25°C
TA=70°C
(Note 2)
(Note 2)
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
(Note 4)
IDM
IDSM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Spec. No. : C159F3
Issued Date : 2016.11.02
Revised Date :
Page No. : 2/8
Limits
Unit
-100
V
±20
-107
-84
-68
-428
A
-8.6
-6.9
-107
572
mJ
37.5
375
125
W
2
1.3
-55~+175 °C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t≤10s
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
RθJC
RθJA
Value
0.4
15
62
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty
cycles to keep initial TJ=25°C.
4. Calculated continuous drain current based on maximum allowable junction temperature.
5. 100% tested by conditions of L=1mH, IAS=-23A, VGS=-10V, VDD=-25V
6. The maximum current limited by package is 84A.
7. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
8. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTD015P10E3
CYStek Product Specification