MTD015P10E3 Datasheet, PDF (4/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C159F3
Issued Date : 2016.11.02
Revised Date :
Page No. : 4/8
Typical Characteristics
Typical Output Characteristics
200
-10V
160
-9V
-8V
-7V
120
-6V
VGS=-5V
Brekdown Voltage vs Junction Temperature
1.4
1.2
1
80
VGS=-4V
40
VGS=-3.5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
0.8
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=-4.5V
1
0.8
Tj=25°C
10
0.6
VGS=-10V
0.4
Tj=150°C
1
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
400
ID=-20A
350
300
250
200
150
100
50
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.2
0
4
8
12
16
20
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2 VDS=-10V, ID=-20A,
RDS(ON)@Tj=25°C : 11.6mΩ typ.
1.6
1.2
0.8
0.4
VGS=-4.5V, ID=-15A
RDS(ON)@Tj=25°C : 13.7mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTD015P10E3
CYStek Product Specification