MTB5K5N40KA3 Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C066A3
Issued Date : 2017.02.15
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Drain Current vs Gate-Source Voltage
1
Ta=25°C
0.8
VDS=10V
0.6
0.4
0.2
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
Single Pulse Power Rating, Junction to Case
200
180
160
TJ(MAX)=150°C
140
TC=25°C
RθJA=167°C/W
120
100
80
60
40
20
0
5
0.00001 0.0001 0.001 0.01 0.1
1
10
Pulse Width(s)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.E-04
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=167°C/W
Single Pulse
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
MTB5K5N40KA3
CYStek Product Specification