MTB5K5N40KA3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C066A3
Issued Date : 2017.02.15
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current @ VGS=10V, TA=25°C
Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Total Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature Range
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. Human body model, 1.5kΩ in series with 100pF
Symbol
VDSS
VGSS
ID
IDM
PD
Tj, Tstg
Limits
Unit
400
±12
V
250
mA
200 *1
1.5
A
755 *1 mW
4000 *2
V
-55~+150
°C
Thermal Data
Parameter
Max. Thermal Resistance, Junction-to-case
Max. Thermal Resistance, Junction-to-ambient
Symbol
RθJC
RθJA
Maximum
45
167
Unit
°C/W
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ. Max.
Static
BVDSS* 1
400
-
-
VGS(th)
1.3
-
2.6
IGSS
-
-
±10
IDSS
-
-
1
RDS(ON)* 1
-
-
4.2
6
4.2
8
GFS
200
670
-
Dynamic
Ciss
-
171
-
Coss
-
15
-
Crss
-
7
-
td(ON) *1, 2
-
6.2
-
tr *1, 2
-
15.8
-
td(OFF) *1, 2
-
18.4
-
tf *1, 2
-
251.8
-
Qg *1, 2
-
5.2
-
Qgs *1, 2
-
1.2
-
Qgd *1, 2
-
1.6
-
Source-Drain Diode
*IS
-
-
250
*ISM
-
-
1.5
*VSD
-
0.73
1.2
Unit
Test Conditions
V ^{VGS=0V, ID=250μA}
VDS=VGS, ID=250μA
μA ^{VGS=±12V, VDS=0V}
VDS=320V, VGS=0V
Ω ^{VGS=10V, ID=100mA}
VGS=4.5V, ID=100mA
mS VDS=10V, ID=100mA
pF VDS=100V, VGS=0V, f=1MHz
ns VDS=200V, ID=0.1A, VGS=10V, RG=6Ω
nC VDS=320V, VGS=10V, ID=0.1A
mA
A
V IS=100mA, VGS=0V
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
MTB5K5N40KA3
CYStek Product Specification