MTB5K5N40KA3 Datasheet, PDF (4/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Typical Characteristics(Cont.)
Spec. No. : C066A3
Issued Date : 2017.02.15
Revised Date :
Page No. : 4/8
Capacitance vs Reverse Voltage
1000
Ciss
100
Coss
10
Crss
f=1MHz
1
0
20
40
60
80
100
VDS, Drain-to-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
1
0.1
0.01
0.001
10
VDS=10V
Ta=25°C
Pulsed
0.01
0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
1
RDS(ON)
Limited
0.1
10μs
100μs
1ms
10ms
0.01 TA=25°C, Tj(max)=150°C
VGS=10V, RθJA=167°C/W
Single pulse
100ms
DC
0.001
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
8
6
4
2
VDS=320V
ID=100mA
0
0
1
2
3
4
5
6
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
0.3
0.25
0.2
0.15
0.1
0.05
VGS=10V, RθJA=167°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB5K5N40KA3
CYStek Product Specification