MTB5K5N40KA3 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C066A3
Issued Date : 2017.02.15
Revised Date :
Page No. : 3/8
Typical Characteristics
Typical Output Characteristics
2.5
Brekdown Voltage vs Ambient Temperature
1.4
2
1.5
1
0.5
0
0
3.5V
10V,9V,8V,7V,6V,5V,4V
VGS=3V
10
20
30
40
50
VDS, Drain-Source Voltage(V)
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Ambient Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
10
VGS=10V
8
6
4
2
0
0.01
0.1
1
10
Drain Current-ID(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
8
6
4
2
ID=0.1A
Ta=25°C
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Static Drain-Source On-resistance vs Ambient Temperature
3.0
2.5
2.0
1.5
1.0
ID=0.1A,
0.5
VGS=10V
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Forward Drain Current vs Source-Drain Voltage
1
VGS=0V
0.1
Ta=150°C
Ta=25°C
0.01
0.001
0
0.2 0.4 0.6 0.8
1
1.2 1.4
VSD, Source Drain Voltage(V)
MTB5K5N40KA3
CYStek Product Specification