MTB55N03KSN3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – 30V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C122N3
Issued Date : 2015.07.22
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
Ciss
100
C _oss
10
0.1
Crss
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
Pulsed
Ta=25°C
VDS=5V
1
0.1
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
100
10
1
0.1
TA=25°C, Tj=150°C,VGS=10V
RθJA=90°C/W, Single Pulse
0.01
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
DC
100
1.2
ID=1mA
1
0.8
ID=250μA
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
2
VDS=15V
ID=4.8A
0
0
1
2
3
4
5
6
7
Qg, Total Gate Charge(nC)
Maximum Drain Current vs JunctionTemperature
6
5
4
3
2
1
TA=25°C, VGS=10V
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
MTB55N03KSN3
CYStek Product Specification