MTB55N03KSN3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – 30V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C122N3
Issued Date : 2015.07.22
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25°C, VGS=10V
TA=70°C, VGS=10V
Pulsed Drain Current
Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
Unit
30
V
±16
4.8
3.8
A
20 (Note 1 & 2)
1.38 (Note 3)
W
0.88 (Note 3)
-55 ~ +150
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction to Ambient , max
Thermal Resistance, Junction to Case, max
Symbol
RθJA
RθJC
Value
90 *2
70
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle ≤ 1%.
3. Surface mounted on 1 in² copper pad of FR4 board, t≤10s; 270°C/W when mounted on min. copper pad.
Electrical Characteristics (TA=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON) ¹
*GFS ¹
30
-
-
V
VGS=0V, ID=250μA
1
-
2.5
VDS=VGS, ID=250μA
-
-
±10
VGS=±16V, VDS=0V
-
-
1
μA VDS=24V, VGS=0V
-
-
10
VDS=24V, VGS=0V, Tj=55°C
-
35
45
mΩ ^{ID=4.2A, VGS=10V}
-
50
65
ID=2A, VGS=4.5V
-
5.5
-
S
VDS=5V, ID=3.5A
Dynamic
Ciss
-
171
-
Coss
-
59
-
pF VDS=10V, VGS=0V, f=1MHz
Crss
-
35
-
*td(ON) ^{1 2}
-
3.6
-
*tr ^{1 2}
-
16
-
*td(OFF) ^{1 2}
-
11.4
-
ns
VDS=15V, ID=4.2A,VGS=10V,
RG=3Ω
*tf ^{1 2}
-
4.4
-
MTB55N03KSN3
CYStek Product Specification