MTB55N03KSN3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – 30V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C122N3
Issued Date : 2015.07.22
Revised Date :
Page No. : 4/9
Typical Characteristics
20
16
12
8
4
0
0
Typical Output Characteristics
10V, 9V, 8V, 7V,
5V
4.5V
4V
3.5V
VGS=3V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
VGS=3V
0.8
100
VGS=4.5V
0.6
Tj=150°C
VGS=10V
10
0.01
0.1
1
10
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
350
ID=4.2A
300
250
200
150
100
50
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.4
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8
VGS=10V, ID=4.2A
1.6
1.4
1.2
1
0.8
0.6
RDS(ON) @ Tj=25°C : 35 mΩ
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB55N03KSN3
CYStek Product Specification