MTB11N03BQ8 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
Ciss
1000
C _oss
100
Crss
f=1MHz
10
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=5V
Pulsed
Ta=25°C
0.01
0.1
1
10
100
ID, Drain Current(A)
1.2
ID=1mA
1.0
0.8
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
ID=11A
8
VDS=24V
6
VDS=6V
4
2
VDS=12V
0
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDS(ON)
10 Limit
1
0.1
TA=25°C, Tj=150°C
VGS=10V,RθJA=40°C/W
Single Pulse
0.01
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
Maximum Drain Current vs Junction Temperature
14
12
10
8
6
4
2 TA=25°C,R^θJA=40°C/W,VGS=10V
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB11N03BQ8
CYStek Product Specification