MTB11N03BQ8 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
48
10V,9V,8V,7V,6V
40
5V
VGS=4.5V
32
VGS=4V
24
16
VGS=3.5V
8
0
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
100
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=3.5V
1.0
VGS=4.5V
0.8
10
VGS=10V
0.6
0.4
Tj=25°C
Tj=150°C
1
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80
ID=12A
70
60
50
40
30
20
10
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2.0
VGS=10V, ID=12A
1.6
1.2
0.8
VGS=4.5V, ID=12A
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB11N03BQ8
CYStek Product Specification