MTB11N03BQ8 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Qg (VGS=10V) *1, 2
-
15.9
-
Qg (VGS=5V) *1, 2
-
Qgs *1, 2
-
9.6
2.7
-
-
nC _{VDS=24V, VGS=10V, ID=11A}
Qgd *1, 2
-
4.7
-
td(ON) *1, 2
-
9
-
tr *1, 2
td(OFF) *1, 2
-
-
17.4
32.4
-
-
VDS=15V, ID=5.5A, VGS=10V,
ns
RGS=4.7Ω
tf *1, 2
-
10
-
Rg
-
1.8
-
Ω f=1MHz
Source-Drain Diode
IS *1
ISM *3
-
-
12
-
-
48
A
VSD *1
-
0.84
1.3
V
trr
-
10.3
-
ns
Qrr
-
4.2
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
IS=12A, VGS=0V
IF=11A, dIF/dt=100A/μs
Recommended Soldering Footprint
MTB11N03BQ8
CYStek Product Specification