MTB11N03BQ8 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V*3
Continuous Drain Current @ TA=70°C, VGS=10V*3
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, ID=12A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation *3
TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
10s
Steady State Unit
30
V
±25
12
8.3
7.6
6.6
A
48 *1
12
72
mJ
5 *2
2.5
1.4
W
1.6
0.9
-55~+150
°C
Thermal Data
Parameter
Symbol Typical Maximum Unit
Thermal Resistance, Junction-to-ambient *3
t≤10s
Steady State
RθJA
35
70
40
85
°C/W
Thermal Resistance, Junction-to case
Steady State RθJC
16
25
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
30
VGS(th)
1.0
GFS *1
-
IGSS
-
-
IDSS
-
-
RDS(ON) *1
-
Dynamic
Ciss
-
Coss
-
Crss
-
-
-
V
VGS=0V, ID=250μA
-
2.5
VDS = VGS, ID=250μA
19
-
S
VDS =5V, ID=11A
-
±100
nA V_GS=±25V
-
-
1
5
μA
VDS =30V, VGS =0V
VDS =24V, VGS =0V, Tj=55°C
8.8
12
mΩ VGS =10V, ID=12A
12.8
17
mΩ VGS =4.5V, ID=12A
751
-
199
-
106
-
pF
VGS=0V, VDS=10V, f=1MHz
MTB11N03BQ8
CYStek Product Specification