MTB09N06E3 Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C912E3
Issued Date : 2015.12.24
Revised Date : 2016.02.19
Page No. : 5/8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
1.2
Ciss
1
C _oss
0.8
ID=1mA
Crss
100
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
VDS=5V
Ta=25°C
Pulsed
0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Safe Operating Area
1000
RDSON
Limited
100
10μs
100μs
1ms
10
10ms
100ms
1 _{TC=25°C, Tj=175°C}
DC
VGS=10V, RθJC=1.1°C/W
Single Pulse
0.1
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
8
6
4
VDS=30V
2
ID=20A
0
0
10 20
30 40 50 60
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
100
90
Silicon limit
80
70
60
50
40
Package limit
30
20
10
VGS=10V, RθJC=1.1°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB09N06E3
CYStek Product Specification