MTB09N06E3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C912E3
Issued Date : 2015.12.24
Revised Date : 2016.02.19
Page No. : 2/8
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
60
V
VGS
±30
Continuous Drain Current @ TC=25°C, VGS=10V(silicon limit)
87
Continuous Drain Current @ TC=100°C, VGS=10V(silicon limit)
ID
61.5
Continuous Drain Current @ TC=25°C, VGS=10V(package limit) (Note 1)
60
Pulsed Drain Current
(Note 3)
IDM
240
A
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
(Note 2)
11
IDSM
(Note 2)
8.8
Avalanche Current
(Note 3)
IAS
30
Avalanche Energy @ L=1mH, ID=30A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
(Note 2)
EAS
(Note 3)
EAR
450
mJ
14
Power Dissipation
TC=25°C
TC=100°C
(Note 1)
PD
(Note 1)
136
W
68
Power Dissipation
TA=25°C
TA=70°C
(Note 2)
2
PDSM
W
(Note 2)
1.3
Operating Junction and Storage Temperature
Tj, Tstg -55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t≤10s (Note 1)
Thermal Resistance, Junction-to-ambient, max
(Note 1)
Symbol
RθJC
RθJA
Value
1.1
15
62.5
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. The maximum current limited by package is 60A.
5. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
6. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB09N06E3
CYStek Product Specification