MTB09N06E3 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C912E3
Issued Date : 2015.12.24
Revised Date : 2016.02.19
Page No. : 3/8
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
Min.
60
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
30
-
-
-
6.4
7.8
39.6
5
12.4
13.4
20.6
49.4
15.4
1678
264
142
2.4
Max.
-
2.5
-
±100
1
10
8
10.5
-
-
-
-
-
-
-
-
-
-
-
Unit Test Conditions
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
S
VDS =5V, ID=20A
nA V_GS=±30V
μA
VDS =48V, VGS =0V
VDS =48V, VGS =0V, Tj=55°C
mΩ ^{VGS =10V, ID=30A}
VGS =4.5V, ID=20A
nC
ID=20A, VDS=30V, VGS=10V
ns
VDD=30V, ID=20A, VGS=10V, RG=3Ω
pF
VGS=0V, VDS=30V, f=1MHz
Ω f=1MHz
Source-Drain Diode
*IS
*VSD
*trr
*Qrr
-
-
60
A
-
0.85
1.2
V
IS=30A, VGS=0V
-
18.3
-
-
13.6
-
ns
nC
IF=30A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB09N06E3
CYStek Product Specification