MTB09N06E3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C912E3
Issued Date : 2015.12.24
Revised Date : 2016.02.19
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB09N06E3
BVDSS
ID @ VGS=10V, TC=25°C
ID @ VGS=10V, TA=25°C
RDSON(TYP) @ VGS=10V, ID=30A
Features
• Low Gate Charge
• Simple Drive Requirement
• Fast Switching Characteristic
• RoHS compliant package
RDSON(TYP) @ VGS=4.5V, ID=20A
60V
87A
11A
6.4mΩ
7.8mΩ
Symbol
MTB09N06E3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
Package
MTB09N06E3-0-UB-X
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB09N06E3
CYStek Product Specification