MTB095N10KRJ3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C714J3
Issued Date : 2017.02.06
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100
C _oss
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
10
ID=250μA
Crss
0.6
1
0
10
20
30
40
50
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
1
0.1
0.01
0.001
100
VDS=10V
Pulsed
Ta=25°C
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
RDS(ON)
Limited
10
10μs
100μs
1ms
1
10ms
TC=25°C, Tj=150°, VGS=10V
RθJC=4.1°C/W, Single Pulse
100ms
DC
0.1
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=50V
8
VDS=20V
6
VDS=80V
4
2
ID=8A
0
01 2345 678
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
14
12
10
8
6
4
2
VGS=10V, RθJC=4.1°C/W
0
25
50
75 100 125 150 175
TC, Case Temperature(°C)
MTB095N10KRJ3
CYStek Product Specification