MTB095N10KRJ3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C714J3
Issued Date : 2017.02.06
Revised Date :
Page No. : 3/9
td(ON) *1, 2
-
5.4
-
tr *1, 2
td(OFF) *1, 2
-
15.8
-
ns
-
15
-
tf *1, 2
-
5
-
Ciss
-
277
-
Coss
-
34
-
pF
Crss
-
8
-
Rg
-
6.6
-
Ω
Source-Drain Diode
IS *1
ISM *3
-
-
-
-
10.9
20
A
VSD *1
-
0.97
1.3
V
trr
-
21.7
-
ns
Qrr
-
18.8
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
VDS=50V, ID=8A, VGS=10V, RG=1Ω
VGS=0V, VDS=50V, f=1MHz
f=1MHz
IS=8A, VGS=0V
IF=8A, dIF/dt=100A/μs
Recommended soldering footprint
MTB095N10KRJ3
CYStek Product Specification