MTB095N10KRJ3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C714J3
Issued Date : 2017.02.06
Revised Date :
Page No. : 4/9
20
10V
9V
8V
15 _7V
6V
10
Typical Output Characteristics
5V
4V
3.5V
5
VGS=3V
0
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=4.5V
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
Tj=25°C
1
0.8
Tj=150°C
100
0.6
VGS=10V
0.4
10
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
ID=8A
400
350
300
250
200
150
100
50
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
VGS=10V, ID=8A
2
1.6
1.2
0.8
RDS(ON)@Tj=25°C : 98mΩ
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB095N10KRJ3
CYStek Product Specification