MTB095N10KRJ3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=7A, VDD=50V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
*3. 100% tested by L=0.1mH, IAS=8A, VGS=10V, VDD=25V
Symbol
VDS
VGS
ID
*1
IDM
IAS
*3
EAS
*2
EAR
PD
Tj, Tstg
Spec. No. : C714J3
Issued Date : 2017.02.06
Revised Date :
Page No. : 2/9
Limits
Unit
100
±20
V
10.9
6.9
A
20
10.9
24.5
3
mJ
30
W
12
-55~+150
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC
4.1
Thermal Resistance, Junction-to-ambient, max
RθJA
50 (Note)
110
°C/W
Note : When the device is mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given
application depends on the user’s specific board design.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
100
-
-
V
VGS=0V, ID=250μA
1
-
2.5
VDS =VGS, ID=250μA
IGSS
-
-
±10
VGS=±16V, VDS=0V
IDSS
-
-
1
μA V_DS =80V, V_GS =0V
-
-
25
VDS =80V, VGS =0V, TJ=125°C
RDS(ON) *1
-
-
98
130
mΩ ^{VGS =10V, ID=8A}
128
180
VGS =4.5V, ID=6A
GFS *1
-
4.9
-
S VDS =10V, ID=5A
Dynamic
Qg *1, 2
-
6.4
-
Qgs *1, 2
-
1.4
-
nC ID=8A, VDS=80V, VGS=10V
Qgd *1, 2
-
1.8
-
MTB095N10KRJ3
CYStek Product Specification