MTB07P03Q8 Datasheet, PDF (5/6 Pages) Cystech Electonics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CYStech Electronics Corp.
Spec. No. : C451Q8
Issued Date : 2009.05.13
Revised Date :
Page No. : 5/6
Characteristic Curves(Cont.)
Gate Charge Characteristics
10
I_D = - 15A
8
V_DS = - 5V
- 10V
- 15V
6
20000
16000
Capacitance Characteristics
Ciss
12000
f = 1 MHz
VGS= 0 V
4
2
0
0
15
30
45
60
75
Qg - Gate Charge(nC)
8000
Coss
4000
Crss
0
0
5
10
15
20
25
30
- V_DS, Drain-to-Source Voltage(V)
Maximum Safe Operating Area
100
RDS(ON) LIMIT
10
1
100μs
1ms
10ms
100ms
1s
10s
DC
VGS= -10V
0.1 ^SINGLEPULSE
RθJA=125°C/W
TA= 25°C
0.01
0.01
0.1
1
10
100
-VDS, Drain-SourceVoltage( V)
Single Pulse Maximum Power Dissipation
50
Single Pulse
RθJA= 125° C/ W
40
TA = 25° C
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
t 1,Time (sec)
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Transient Thermal Resistance Curve
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1,TIME( sec )
RθJA(t)= r(t) * RθJA
RθJA= 125° C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
MTB07P03Q8
CYStek Product Specification