MTB07P03Q8 Datasheet, PDF (3/6 Pages) Cystech Electonics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CYStech Electronics Corp.
Spec. No. : C451Q8
Issued Date : 2009.05.13
Revised Date :
Page No. : 3/6
Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Source-Drain Diode
IS
-
ISM(Note 3)
-
-
-
-3.6
-14.4
A
VSD(Note 1)
-
-
-1.2
V
trr
-
52
-
ns
Qrr
-
60
-
nC
Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
2.Independent of operating temperature
3.Pulse width limited by maximum junction temperature
Test Conditions
IF=IS, VGS=0V
IF=IS, dIF/dt=100A/μs
Thermal Resistance Ratings
Thermal Resistance
Symbol
Junction-to-Case
R_θJC
Junction-to-Ambient (Note)
R_θJA
Note : 50°C / W when mounted on a 1 in² pad of 2 oz copper.
Typical
Maximum
25
50
Unit
°C / W
MTB07P03Q8
CYStek Product Specification