MTB07P03Q8 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CYStech Electronics Corp.
Spec. No. : C451Q8
Issued Date : 2009.05.13
Revised Date :
Page No. : 2/6
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Breakdown Voltage
BVDSS
-30
V
Gate-Source Voltage
VGS
±25
V
Continuous Drain Current @TC=25 °C
ID
-15
A
Continuous Drain Current @TC=100 °C
ID
-11
A
Pulsed Drain Current (Note 1)
IDM
-60
A
Avalanche Current
IAS
-25
A
Avalanche Energy @ L=0.1mH, ID=-25A, RG=25Ω
EAS
31.25
mJ
Power Dissipation
TA=25 °C
TA=100 °C
3
W
PD
1.5
W
Operating Junction and Storage Temperature Range
Tj ; Tstg
-55~+175
°C
Note : 1.Pulse width limited by maximum junction temperature.
Electrical Characteristics (Tc=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
-30
VGS(th)
-1
IGSS
-
IDSS
-
IDSS
-
ID(ON) (Note 1) -15
-
RDS(ON) (Note 1)
-
GFS
(Note 1)
-
Dynamic
Ciss
-
Coss
-
Crss
-
td(ON) (Note 1&2)
-
tr (Note 1&2)
-
td(OFF) (Note 1&2)
-
tf (Note 1&2)
-
Qg(VGS=10V) (Note 1&2)
-
Qg(VGS=5V) (Note 1&2)
-
Qgs (Note 1&2)
-
Qgd (Note 1&2)
-
Rg
-
-
-
-1.5
-3
-
±100
-
-1
-
-10
-
-
6
7.5
9
12
28
-
15545 -
3776
-
3507
-
26
-
22
-
75
-
15
-
56
-
40
-
15
-
18
-
3
-
V VGS=0, ID=-250μA
V VDS=VGS, ID=-250μA
nA VGS=±25V, VDS=0
μA VDS=-24V, VGS=0
μA VDS=-20V, VGS=0, Tj=125°C
A VDS=-5V, VGS=-10V
mΩ
ID=-12A, VGS=-10V
ID=-9A, VGS=-5V
S VDS=-5V, ID=-12A
pF VDS=-15V, VGS=0, f=1MHz
ns
VDS=-15V, ID=-1A,
VGS=-10V, RG=2.7Ω
nC
VDS=-15V, ID=-10A,
VGS=-10V,
Ω VGS=15mV, VDS=0, f=1MHz
MTB07P03Q8
CYStek Product Specification