MTB07P03Q8 Datasheet, PDF (4/6 Pages) Cystech Electonics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C451Q8
Issued Date : 2009.05.13
Revised Date :
Page No. : 4/6
On-Region Characteristics
60
VGS= - 10V
- 6.0V
48
- 4.5V
- 4.0V
36
- 3.5V
24
12
- 3.0V
0
0
1
2
3
-VDS- Drain-to-Source Voltage(V)
On-Resistance Variation with Temperature
1.6
I _D= - 15 A
V_GS = - 10V
1.4
1.2
1.0
0.8
0.6
-50
-25 0 25 50 75 100 125
T_J - Junction Temperature (° C)
150 175
Transfer Characteristics
40
V_DS = - 5V
- 55° C
30
25° C
20
TA = 125°C
10
0
1.5
2
2.5
3
3.5
4
-V_GS - Gate-to-Source Voltage(V)
On-ResistanceVariationwithDrainCurrent andGateVoltage
2.5
2.4
2.2
VGS= -3.5V
2.0
1.8
-4.0V
1.6
-4.5V
1.4
-5.0V
-6.0V
1.2
-10V
1.0
0.0
0
15
30
45
60
- ID, DrainCurrent( A)
0.030
0.025
On-Resistance Variation with Gate-Source Voltage
ID = - 7.5 A
0.020
0.015
0.010
T_A = 125° C
0.005
TA = 25° C
0
2
4
6
8
10
- V_GS- Gate-Source Voltage( V )
Body Diode Forward Voltage Variation with Source Current and Temperature
100
10 ^{VGS = 0V}
1
TA = 125°C
0.1
25° C
0.01
-55° C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1.0
1.2
-V_SD- Body Diode Forward Voltage(V)
MTB07P03Q8
CYStek Product Specification