MTA090N02KC3 Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – 20V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C983C3
Issued Date : 2014.11.19
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Maximum Safe Operating Area
10
RDS(ON)
Limited
1
100μ s
1ms
0.1
10ms
100ms
0.01 TA=25°C, Tj=150°C,
VGS=4V, RθJA=450°C/W
Single Pulse
0.001
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
DC
100
Maximum Drain Current vs JunctionTemperature
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2 ^{TA=25°C, VGS=4V, RθJA=450°C/W}
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
6
8
5
6
4
3
4
VDS=10V
2
ID=200mA
2
1
0
0
0
1
2
3
4
5
6
0
Qg, Total Gate Charge(nC)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Typical Transfer Characteristics
VDS=3V
TA=25°C
1
2
3
4
5
VGS, Gate-Source Voltage(V)
1.Rθ JA(t)=r(t)*Rθ JA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*Zθ JA(t)
4.Rθ JA=450°C/W
0.001
1.E-04
MTA090N02KC3
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification