MTA090N02KC3 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – 20V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C983C3
Issued Date : 2014.11.19
Revised Date :
Page No. : 3/8
Source-Drain Diode
*VSD
-
*trr
-
*Qrr
-
0.84 1.2
4.6
-
1.0
-
V VGS=0V, IS=1A
ns
nC
IF=0.2A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Typical Characteristics
Typical Output Characteristics
6
10V, 9V, 8V, 7V, 6V, 5V, 4V, 3V
5
4
3
VGS=2V
2
1
0
0
800
0.5
1
1.5
2
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
600
400
VGS=1.5V
200
VGS=1.8V
VGS=2V
VGS=2.5V
VGS=3V
VGS=4V
0
0.01
0.1
1
10
ID, Drain Current(A)
Brekdown Voltage vs Ambient Temperature
1.4
ID=250μA,
VGS=0V
1.2
1
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
VGS=0V
0
0
0.2
0.4
0.6
0.8
1
IDR, Reverse Drain Current (A)
MTA090N02KC3
CYStek Product Specification