MTA090N02KC3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – 20V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C983C3
Issued Date : 2014.11.19
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4V
Continuous Drain Current @ TA=70°C, VGS=4V
Pulsed Drain Current (Notes 1, 2)
Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
VESD
Tj, Tstg
Limits
Unit
20
±8
V
1.4 (Note 3)
1.1 (Note 3)
A
6.0
280 (Note 3) mW
1200 (Note 4)
V
-55~+150
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max (Note 3)
Thermal Resistance, Junction-to-Case, max
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board.
4. Human body model, 1.5kΩ in series with 100pF.
Symbol
Rɵja
Rɵjc
Limit
450
312
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
20
-
-
V
VGS=0V, ID=250μA
0.3
-
1.0
VDS=VGS, ID=250μA
-
-
±10
VGS=±8V, VDS=0V
IDSS
-
-
1
μA _{VDS=20V, VGS=0V}
-
-
10
VDS=16V, VGS=0V (Tj=70°C)
*RDS(ON)
-
63
100
VGS=4V, ID=1A
-
83
120
mΩ VGS=2.5V, ID=1A
-
160
250
VGS=1.8V, ID=500mA
*GFS
-
3.8
-
S VDS=3V, ID=1A
Dynamic
Ciss
-
159
-
Coss
-
26
-
pF VDS=15V, VGS=0, f=1MHz
Crss
-
27
-
td(ON)
tr
td(OFF)
-
4.4
-
-
17.8
-
-
14.8
-
ns
VDS=10V, ID=200mA, VGS=4.5V,
RG=10Ω
tf
-
17
-
Qg
-
2.6
-
Qgs
-
0.56
-
nC VDS=10V, ID=200mA, VGS=4.5V
Qgd
-
0.4
-
MTA090N02KC3
CYStek Product Specification