MTA090N02KC3 Datasheet, PDF (4/8 Pages) Cystech Electonics Corp. – 20V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C983C3
Issued Date : 2014.11.19
Revised Date :
Page No. : 4/8
Typical Characteristics(Cont.)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
800
700
ID=1A
600
500
400
300
200
100
0
012345678
VGS, Gate-Source Voltage(V)
Drain-Source On-State Resistance vs Junction Tempearture
1.8
VGS=4V, ID=1A
1.6
RDS(ON)@Tj=25°C : 63mΩ typ.
1.4
1.2
1
0.8
VGS=2.5V, ID=1A
RDS(ON)@Tj=25°C : 83mΩ typ.
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
100
Crss
Ciss
C _oss
1.2
ID=1mA
1
0.8
0.6
ID=250μ A
10
0.1
5
1
10
100
VDS, Drain-Source Voltage(V)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
4
TJ(MAX)=150°C
TA=25°C
RθJA=450°C/W
3
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
2
1
0
0.001 0.01
0.1
1
10
100
Pulse Width(s)
0.1
0.01
0.001
VDS=3V
Ta=25°C
Pulsed
0.01
0.1
1
10
ID, Drain Current(A)
MTA090N02KC3
CYStek Product Specification