MEN9973J3 Datasheet, PDF (4/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C418J3-E
Issued Date : 2009.02.10
Revised Date :
Page No. : 4/7
Characteristic Curves(Cont.)
10
ID = 10A
8
6
Gate Charge Characteristics
VDS = 15V
30V
4
2
0
0
2
4
6
8
10
12
14
Qg - Gate Charge( nC)
1500
1350
1200
1050
900
750
600
450
300
150
0
0
Capacitance Characteristics
Ciss
Coss
Crss
10
20
30
40
VDS - Drain-Source Voltage( V )
f = 1MHz
VGS = 0 V
50
60
Maximum Safe Operating Area
80
50
R_DS(ON) Limit
10
100μs
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
Single Pulse
RθJC = 7.5°C/ W
1
TC = 25°C
0
01
10
60
VDS - Drain-Source Voltage( V )
Single Pulse Maximum Power Dissipation
50
Single Pulse
RθJC= 7.5° C/ W
40
TA = 25° C
30
20
10
0
0.001
0.01 0.1
1
10
t 1,Time ( sec )
100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ^-4
10 ^-3
10 ^-2
10 ^-1
1
t 1 ,Time (sec)
Notes:
PDM
t1
1.Duty
Cycle,D
t2
=
t1
t2
2.RθJC=7.5° C/ W
3.TJ - TC = P* RθJC (t)
4.RθJC(t)=r(t) * RθJC
10
100
1000
MEN9973J3
CYStek Product Specification