MEN9973J3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C418J3-E
Issued Date : 2009.02.10
Revised Date :
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MEN9973J3
BVDSS
ID
RDSON
60V
12A
100mΩ
Features
• VDS=60V
RDS(ON)=80mΩ(max.)@VGS=10V, ID=9A
RDS(ON)=100mΩ(max.)@VGS=5V, ID=6A
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MEN9973J3
Outline
TO-252
G：Gate
D：Drain
S：Source
GDS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=12A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty Cycle ≤ 1%
MEN9973J3
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
Limits
60
±20
12
8
30 *1
12
7.2
3.6 *2
20
0.22
-55~+175
Unit
V
V
A
A
A
A
mJ
mJ
W
W/°C
°C
CYStek Product Specification