MEN9973J3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C418J3-E
Issued Date : 2009.02.10
Revised Date :
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
7.5
80
Unit
°C/W
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
60
∆BVDSS/∆Tj
-
VGS(th)
1.0
GFS
-
IGSS
-
-
IDSS
-
*ID(ON)
12
*RDS(ON)
-
*RDS(ON)
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
-
-
V
VGS=0, ID=250μA
0.05
-
V/°C Reference to 25°C, ID=1mA
2.0
3.2
V
VDS = VGS, ID=250μA
19
-
S
VDS =5V, ID=10A
-
±100
nA
VGS=±20
-
1
μA VDS =48V, VGS =0
-
25
μA V_DS =40V, V_GS =0, Tj=150°C
-
-
A
VDS =10V, VGS=10V
-
80
mΩ VGS =10V, ID=9A
-
100
mΩ VGS =5V, ID=6A
11
-
2.2
-
nC
ID=10A, VDS=20V, VGS=10V
2.4
-
10
-
7.5
-
18
-
ns
VDS=20V, ID=1A, VGS=10V,
RG=6Ω, RD=20Ω
6
-
913
-
65
-
pF
VGS=0V, VDS=20V, f=1MHz
53
-
2.5
-
Ω
VGS=15mV, VDS=0V, f=1MHz
-
-
12
48
A
-
1.3
V
IS=12A, VGS=0V
15
8
-
-
ns
nC
IS=5A, VGS=0, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MEN9973J3
Package
TO-252
(RoHS compliant)
Shipping
2500 pcs / Tape & Reel
Marking
9973
MEN9973J3
CYStek Product Specification